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MUR8100E, RURP8100
Data Sheet January 2000 File Number 2780.4
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09617.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supply * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER MUR8100E RURP8100 PACKAGE TO-220AC TO-220AC BRAND MUR8100 RURP8100
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified MUR8100E RURP8100 UNITS V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 155oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave 1 Phase 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
1000 1000 1000 8 16 100 75 20 -55 to 175
1
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(c) Intersil Corporation 2000
MUR8100E, RURP8100
Electrical Specifications
SYMBOL VF IF = 8A IF = 8A, TC = 150oC IR VR = 1000V VR = 1000V, TC = 150oC trr IF = 1A IF = 8A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/s (See Figure 9), summation of ta + tb . ta = Time to reach peak reverse current at dIF/dt = 100A/s (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 8A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified. TEST CONDITION MIN TYP 50 30 500 30 MAX 1.8 1.5 100 500 85 100 2.0 UNITS V V A A ns ns ns ns nC pF
oC/W
Typical Performance Curves
40 IR , REVERSE CURRENT (A) 200 175oC
IF, FORWARD CURRENT (A)
175oC 10
10 100oC 1
0.1 25oC
100oC 1 0.5 0 0.5 1
25oC
0.01
0.001 1.5 2 2.5 3 0 200 400 600 800 1000 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
MUR8100E, RURP8100 Typical Performance Curves
(Continued)
100 TC = 25oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 80
125
TC = 100oC, dIF/dt = 200A/s
100
60
75
trr
40
trr ta tb
1 IF, FORWARD CURRENT (A) 4 8
50
ta
20
25
tb
0 0.5 1 IF, FORWARD CURRENT (A) 4 8 0 0.5
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
150 TC = 175oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 125 100 75
8
DC 6 SQ. WAVE 4
trr ta
50 25 0 0.5 1 IF, FORWARD CURRENT (A) 4 8
tb
2
0 140
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100 CJ , JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
MUR8100E, RURP8100 Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 8. trr TEST CIRCUIT
I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 4

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